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| Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.60.2 3.20.1 9.90.3 2.90.2 15.00.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1604 2SB1604A 2SB1604 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) 13.7-0.2 +0.5 4.10.2 8.00.2 Solder Dip 3.00.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw Ratings -40 -50 -20 -40 -5 -20 -10 40 2 150 -55 to +150 Unit V 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 emitter voltage 2SB1604A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1604 2SB1604A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = -40V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -3A IC = -10A, IB = - 0.33A IC = -10A, IB = - 0.33A VCE = -10V, IC = - 0.5A, f = 10MHz VCB = -10V, IE = 0, f = 1MHz IC = -3A, IB1 = - 0.1A, IB2 = 0.1A min typ max -50 -50 Unit A A V -20 -40 45 90 260 - 0.6 -1.5 100 400 0.1 0.5 0.1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT Cob ton tstg tf V V MHz pF s s s Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC -- Ta 50 -12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) IB=-100mA -10 -80mA -60mA -50mA -40mA -6 -35mA -30mA -25mA -4 -20mA -15mA -2 -10mA -5mA 0 0 20 40 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 TC=25C 2SB1604, 2SB1604A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -10 VCE(sat) -- IC IC/IB=30 Collector power dissipation PC (W) Collector current IC (A) 40 -3 -8 -1 TC=100C 25C -25C 30 (1) 20 - 0.3 - 0.1 10 (3) (4) 0 (2) - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -10 hFE -- IC IC/IB=30 10000 VCE=-2V 10000 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -3 TC=-25C 100C 25C 1000 300 100 -25C 30 10 3 1 - 0.1 - 0.3 25C -1 TC=100C - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 Transition frequency fT (MHz) -10 -30 -100 3000 - 0.3 -1 -3 -10 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 10 IE=0 f=1MHz TC=25C ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (-IB1=IB2) VCC=-20V TC=25C tstg 0.3 ton 0.1 tf Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP t=1ms IC Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 Switching time ton,tstg,tf (s) 3 Collector current IC (A) -10 -3 -1 1 10ms DC - 0.3 - 0.1 - 0.03 0.03 0.01 -1 -3 -10 -30 -100 0 -1 -2 -3 -4 -5 -6 -7 -8 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 2SB1604A -100 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB1604 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 2SB1604, 2SB1604A Thermal resistance Rth(t) (C/W) 102 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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